Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 709-712

  Kao, Chyuan Haur ^a   Chan, T C ^a   Chen, Kung Shao ^a   Chung, Yu Teng ^a   Luo, Wen Shih ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN ELECTRIC FIELD; ELECTRICAL CHARACTERISTIC; GATE VOLTAGES; PHYSICAL CHARACTERISTICS; POLY OXIDE; POLY-CRYSTALLINE SILICON; RF SPUTTERING SYSTEM; TRAP STATE;

DANGLING BONDS; ELECTRIC FIELDS; POLYSILICON; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

NEODYMIUM;

EID: 77953128702     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.02.005     Document Type: Article

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