Electrical properties of hafnium oxide gate dielectric deposited by plasma enhanced chemical vapor deposition

Integrated Ferroelectrics

Volumn 38, Issue 1-4, 2001, Pages 191-199

  Choi, Kyu Jeong ^a   Shin, Woong Chul ^a   Park, Jong Bong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

Gate dielectrics; HfO2; PECVD

Indexed keywords

CHARGE TRAPPING; CURRENT VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

COUNTERCLOCKWISE HYSTERESIS; GATE DIELECTRIC FORMATION;

OXIDE FILMS;

EID: 0038290713     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108016932     Document Type: Article

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