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Volumn 256, Issue 23, 2010, Pages 7186-7193

Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm 2 O 3 gate dielectrics

(2) Pan, Tung Ming a Huang, Chun Chin a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC FILMS; GATE DIELECTRICS; OXYGEN; REACTIVE SPUTTERING; SAMARIUM COMPOUNDS; SILICA; SILICATES; SURFACE ROUGHNESS; X RAY DIFFRACTION;

CAPACITANCE-EQUIVALENT THICKNESS; CAPACITANCE-VOLTAGE CURVE; ELECTRICAL CHARACTERISTIC; INTERFACE TRAP DENSITY; MORPHOLOGICAL FEATURES; PHYSICAL AND ELECTRICAL PROPERTIES; POST DEPOSITION ANNEALING; RF REACTIVE SPUTTERING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77955307016 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.05.048 Document Type: Article

Times cited : (38)

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