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Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 188-193

Current conduction mechanism in TiO2 gate dielectrics

(4) Chakraborty, S a Bera, M K a Bhattacharya, S b Maiti, C K a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

High k; Poole Frenkel effect; Schottky emission; Strained Si; TiO2

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HEAT CONDUCTION; MOSFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH-K; POOLE-FRENKEL (PF) EFFECT; SCHOTTKY EMISSION; STRAINED-SI; TIO2;

TITANIUM DIOXIDE;

EID: 23444457463 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.03.005 Document Type: Conference Paper

Times cited : (66)

References (24)

1
- 0000741169
- S. Takagi, J.L. Hoyt, J. Welser, and J.F. Gibbons J. Appl. Phys. 80 1996 1567 1577
- (1996) J. Appl. Phys. , vol.80 , pp. 1567-1577
- Takagi, S.¹ Hoyt, J.L.² Welser, J.³ Gibbons, J.F.⁴

2
- 0004022851
- IEE UK
- C.K. Maiti, N.B. Chakrabarti, and S.K. Ray Strained silicon heterostructures: materials and devices 2001 IEE UK
- (2001) Strained Silicon Heterostructures: Materials and Devices
- Maiti, C.K.¹ Chakrabarti, N.B.² Ray, S.K.³

3
- 36449003379
- Y.J. Mii, Y.H. Xie, E.A. Fitzgerald, D. Monroe, F.A. Thiel, B.E. Weir, and L.C. Feldman Appl. Phys. Lett. 59 1991 1611 1613
- (1991) Appl. Phys. Lett. , vol.59 , pp. 1611-1613
- Mii, Y.J.¹ Xie, Y.H.² Fitzgerald, E.A.³ Monroe, D.⁴ Thiel, F.A.⁵ Weir, B.E.⁶ Feldman, L.C.⁷

4
- 36449008424
- K. Ismail, M. Arafa, K.L. Saenger, J.O. Chu, and B.S. Meyerson Appl. Phys. Lett. 66 1995 1077 1079
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1077-1079
- Ismail, K.¹ Arafa, M.² Saenger, K.L.³ Chu, J.O.⁴ Meyerson, B.S.⁵

5
- 0032067972
- D.J. Paul, A. Ahmed, N. Griffin, M. Pepper, A.C. Churchill, D.J. Robbins, and D.J. Wallis Thin Solid Films 321 1998 181 185
- (1998) Thin Solid Films , vol.321 , pp. 181-185
- Paul, D.J.¹ Ahmed, A.² Griffin, N.³ Pepper, M.⁴ Churchill, A.C.⁵ Robbins, D.J.⁶ Wallis, D.J.⁷

6
- 36448998527
- T. Vogelsang, and K.R. Hofmann Appl. Phys. Lett. 63 1993 186 188
- (1993) Appl. Phys. Lett. , vol.63 , pp. 186-188
- Vogelsang, T.¹ Hofmann, K.R.²

7
- 33144456500
- G. Abstreiter, H. Brugger, and T. Wolf Phys. Rev. Lett. 54 1985 2441 2444
- (1985) Phys. Rev. Lett. , vol.54 , pp. 2441-2444
- Abstreiter, G.¹ Brugger, H.² Wolf, T.³

8
- 0037868881
- D.K. Nayak, and S.K. Chun Appl. Phys. Lett. 64 1994 2514 2516
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2514-2516
- Nayak, D.K.¹ Chun, S.K.²

9
- 0032202255
- C.K. Maiti, L.K. Bera, and S. Chattopadhyay Semicond. Sci. Technol. 13 1998 1225 1246
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 1225-1246
- Maiti, C.K.¹ Bera, L.K.² Chattopadhyay, S.³

10
- 0034794354
- K. Rim, S. Koester, M. Hargrove, J. Chu, P.M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H.S.P. Wong IEEE VLSI Tech. Dig. 2001 59 60
- (2001) IEEE VLSI Tech. Dig. , pp. 59-60
- Rim, K.¹ Koester, S.² Hargrove, M.³ Chu, J.⁴ Mooney, P.M.⁵ Ott, J.⁶ Kanarsky, T.⁷ Ronsheim, P.⁸ Ieong, M.⁹ Grill, A.¹⁰ Wong, H.S.P.¹¹

11
- 0030270182
- D.K. Nayak, K. Goto, A. Yutani, J. Murota, and Y. Shiraki IEEE Trans. Electron Dev. 43 1996 1709 1716
- (1996) IEEE Trans. Electron Dev. , vol.43 , pp. 1709-1716
- Nayak, D.K.¹ Goto, K.² Yutani, A.³ Murota, J.⁴ Shiraki, Y.⁵

12
- 0028383440
- J. Wesler, J.L. Hoyt, and J.F. Gibbons IEEE Electron Dev. Lett. 15 1994 100 102
- (1994) IEEE Electron Dev. Lett. , vol.15 , pp. 100-102
- Wesler, J.¹ Hoyt, J.L.² Gibbons, J.F.³

13
- 0029490096
- K. Ismail IEEE IEDM Tech. Dig. 1995 509 512
- (1995) IEEE IEDM Tech. Dig. , pp. 509-512
- Ismail, K.¹

14
- 0031075556
- M. Gluck, T. Hackbarth, U. Konig, A. Haas, G. Hock, and E. Kohn Electron. Lett. 33 1997 335 337
- (1997) Electron. Lett. , vol.33 , pp. 335-337
- Gluck, M.¹ Hackbarth, T.² Konig, U.³ Haas, A.⁴ Hock, G.⁵ Kohn, E.⁶

15
- 0013242121
- F.K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B.S. Meyerson J. Appl. Phys. 65 1989 1724 1728
- (1989) J. Appl. Phys. , vol.65 , pp. 1724-1728
- Legoues, F.K.¹ Rosenberg, R.² Nguyen, T.³ Himpsel, F.⁴ Meyerson, B.S.⁵

16
- 0037480048
- P.E. Hellberg, S.L. Zhang, F.M. D'Heurle, and C.S. Petersson J. Appl. Phys. 82 1997 5773 5778
- (1997) J. Appl. Phys. , vol.82 , pp. 5773-5778
- Hellberg, P.E.¹ Zhang, S.L.² D'Heurle, F.M.³ Petersson, C.S.⁴

17
- 0030865462
- S.A. Campbell, D.C. Gilmer, X.C. Wang, M.T. Hsieh, H.S. Kim, W.L. Gladfelter, and J. Yan IEEE Trans. Electron Dev. 44 1997 104 109
- (1997) IEEE Trans. Electron Dev. , vol.44 , pp. 104-109
- Campbell, S.A.¹ Gilmer, D.C.² Wang, X.C.³ Hsieh, M.T.⁴ Kim, H.S.⁵ Gladfelter, W.L.⁶ Yan, J.⁷

18
- 0001158030
- H.S. Kim, D.C. Gilmer, S.A. Campbell, and D.L. Polla Appl. Phys. Lett. 69 1996 3860 3862
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3860-3862
- Kim, H.S.¹ Gilmer, D.C.² Campbell, S.A.³ Polla, D.L.⁴

19
- 2142780806
- Perkin-Elmer Corp Minnesota
- C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, and G.E. Muilenberg Hand book of X-ray photoelectron spectroscopy 1978 Perkin-Elmer Corp Minnesota
- (1978) Hand Book of X-ray Photoelectron Spectroscopy
- Wagner, C.D.¹ Riggs, W.M.² Davis, L.E.³ Moulder, J.F.⁴ Muilenberg, G.E.⁵

20
- 0018515418
- R. Razouk, and B. Deal J. Electrochem. Soc. 126 1979 1573 1581
- (1979) J. Electrochem. Soc. , vol.126 , pp. 1573-1581
- Razouk, R.¹ Deal, B.²

21
- 0004005306
- second ed. Wiley New York
- S.M. Sze Physics of semiconductor devices second ed. 1981 Wiley New York
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

22
- 0019056629
- W.A. Hill, and C.C. Coleman Solid-State Electron. 23 1980 987 993
- (1980) Solid-State Electron. , vol.23 , pp. 987-993
- Hill, W.A.¹ Coleman, C.C.²

23
- 0028758514
- S.C. Sun, and T.F. Chen IEEE IEDM Tech. Dig. 1994 333 336
- (1994) IEEE IEDM Tech. Dig. , pp. 333-336
- Sun, S.C.¹ Chen, T.F.²

24
- 0141817672
- J.G. Simmons Phys. Rev. 155 1967 657 660
- (1967) Phys. Rev. , vol.155 , pp. 657-660
- Simmons, J.G.¹

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