Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation

Journal of Non-Crystalline Solids

Volumn 355, Issue 1, 2009, Pages 33-37

  Yang, Chen ^a   Fan, Huiqing ^a   Qiu, Shaojun ^a   Xi, Yingxue ^a   Fu, Yunfei ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Electrical and electronic properties; Films and coatings; Processing; Vapor phase deposition

Indexed keywords

ATOMIC PHYSICS; ATOMS; CERAMIC CAPACITORS; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; EVAPORATION; FILM PREPARATION; GATE DIELECTRICS; GATES (TRANSISTOR); LANTHANUM; MICROCRYSTALLINE SILICON; MOISTURE; SILICON COMPOUNDS; SUBSTRATES; ULTRATHIN FILMS; VAPORS;

AMORPHOUS STATES; ANNEALING TEMPERATURES; ATOMIC FORCES; BEAM EVAPORATIONS; DIELECTRIC CONSTANTS; ELECTRICAL AND ELECTRONIC PROPERTIES; ELECTRICAL PROPERTIES; FILMS AND COATINGS; GATE BIAS VOLTAGES; GATE DIELECTRIC FILMS; GROWTH PROCESSING; INTERFACIAL LAYERS; INTERFACIAL STRUCTURES; SI SUBSTRATES; SILICON SUBSTRATES; VAPOR PHASE DEPOSITION;

AMORPHOUS FILMS;

EID: 57849099575     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2008.09.029     Document Type: Article

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