Group III-nitride lasers: A materials perspective

Materials Today

Volumn 14, Issue 9, 2011, Pages 408-415

  Hardy, Matthew T ^a   Feezell, Daniel F ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; POLARIZATION;

CRITICAL THICKNESS; DEFECT REDUCTION; DEVICE DEVELOPMENT; EXTENDED DEFECT; GROUP III NITRIDES; POLARIZATION EFFECT; POLARIZATION PROPERTIES; STATE-OF-THE-ART DEVICES;

DISPERSIONS;

EID: 80052062325     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-7021(11)70185-7     Document Type: Review

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