InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 483-489

  Nakamura, Shuji ^a,b,c,d  

^a NICHIA CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c UNIVERSITY OF FLORIDA   (United States)

^d Nichia Chemical   (Japan)

Author keywords

Blue laser diodes; GaN; InGaN; Lifetime

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; FREQUENCY MODULATION; LIGHT MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

MODULATION DOPED STRAINED LAYER SUPERLATTICES (MD SLS);

QUANTUM WELL LASERS;

EID: 0032068359     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704105     Document Type: Article

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