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Volumn 95, Issue 13, 2009, Pages

Nonpolar GaN substrates grown by ammonothermal method

(10) Kucharski, R a Rudzinski M b Zajac M a Doradzinski R a Garczynski J a Sierzputowski, L a Kudrawiec, R c Serafinczuk J c Strupinski W b Dwilinski R a

a AMMONO Sp Zoo (Poland)

b ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

c WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONOTHERMAL METHOD; ASYMMETRICAL PEAKS; CONCENTRATION OF; CONTACTLESS ELECTROREFLECTANCE; EXCITON LINES; GAN EPILAYERS; GAN SUBSTRATE; GOOD OPTICAL QUALITY; HEXAGONAL SYMMETRY; LARGE SIZES; M-PLANE; NON-POLAR; NON-POLAR GAN; OPTICAL SELECTION RULES; ROOM TEMPERATURE; STRUCTURAL QUALITIES; THREADING DISLOCATION DENSITIES;

DIAMOND FILMS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70349664556 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3227893 Document Type: Article

Times cited : (54)

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