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Volumn 8, Issue 7-8, 2011, Pages 2170-2172
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Origin of the "green gap": Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures
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Author keywords
GaInN; Photoluminescence; Quantum wells; Recombination; Time resolved
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Indexed keywords
GAINN;
INDIUM CONCENTRATION;
LIGHT EMITTING DEVICES;
MULTIPLE QUANTUM-WELL STRUCTURES;
NITROGEN VACANCIES;
NON-RADIATIVE LIFETIMES;
NON-RADIATIVE RECOMBINATIONS;
NONRADIATIVE PROCESS;
OPTICALLY ACTIVE;
OSCILLATOR STRENGTHS;
QUANTUM WELL;
QUANTUM WELL STRUCTURES;
QUANTUM-CONFINED STARK EFFECT;
RECOMBINATION;
TIME-RESOLVED;
TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;
WELL WIDTH;
GALLIUM NITRIDE;
INDIUM;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 79960746303
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201001051 Document Type: Article |
Times cited : (112)
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References (8)
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