High-performance blue InGaN laser diodes with single-quantum-well active layers

IEEE Photonics Technology Letters

Volumn 19, Issue 21, 2007, Pages 1717-1719

  Ryu, Han Y ^a   Ha, K H ^a   Lee, S N ^b   Jang, T ^b   Son, J K ^b   Paek, H S ^b   Sung, Y J ^b   Kim, H K ^b   Kim, K S ^b   Nam, O H ^b   Park, Y J ^b   Shim, J I ^c  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

(In)GaN; Blue laser; Laser diode (LD); Single quantum well (QW)

Indexed keywords

CONTINUOUS WAVE LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BLUE LASER DIODES; EMISSION WAVELENGTH; OPTICAL DAMAGE; OUTPUT POWER;

SEMICONDUCTOR LASERS;

EID: 35348972407     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.905215     Document Type: Article

References (10)

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