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Volumn 6894, Issue , 2008, Pages

Recent status of white LEDs and nitride LDs

Author keywords

488nm; Efficiency; LD; LED; White

Indexed keywords

CUBIC BORON NITRIDE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LUMINOUS MATERIALS; NITRIDES; PIGMENTS; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

EID: 42149116250     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.764404     Document Type: Conference Paper
Times cited : (39)

References (10)
  • 1
    • 84896842913 scopus 로고    scopus 로고
    • InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
    • M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano and T. Mukai, "InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode", Jpn. J. Appl. Phys., vol. 41, L1431-L1433, 2002
    • (2002) Jpn. J. Appl. Phys , vol.41
    • Yamada, M.1    Mitani, T.2    Narukawa, Y.3    Shioji, S.4    Niki, I.5    Sonobe, S.6    Deguchi, K.7    Sano, M.8    Mukai, T.9
  • 6
    • 0344975184 scopus 로고    scopus 로고
    • Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm
    • Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita and S. Nakamura, "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm", Appl. Phys. Lett., vol. 70, pp. 981-983, 1997.
    • (1997) Appl. Phys. Lett , vol.70 , pp. 981-983
    • Narukawa, Y.1    Kawakami, Y.2    Funato, M.3    Fujita, S.4    Fujita, S.5    Nakamura, S.6
  • 7
    • 0001212678 scopus 로고    scopus 로고
    • Spatially resolved cathodoluminescence spectra of InGaN quantum wells
    • S. Chichibu, K. Wada, S. Nakamura, "Spatially resolved cathodoluminescence spectra of InGaN quantum wells", Appl. Phys. Lett., vol. 71, pp. 2346-2348, 1997.
    • (1997) Appl. Phys. Lett , vol.71 , pp. 2346-2348
    • Chichibu, S.1    Wada, K.2    Nakamura, S.3
  • 10
    • 0035328412 scopus 로고    scopus 로고
    • Wavelength Dependence of InGaN Laser Diode Characteristics
    • S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength Dependence of InGaN Laser Diode Characteristics", Jpn. J. Appl. Phys., vol. 40, pp 3075-3081, 2001.
    • (2001) Jpn. J. Appl. Phys , vol.40 , pp. 3075-3081
    • Nagahama, S.1    Yanamoto, T.2    Sano, M.3    Mukai, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.