-
1
-
-
84896842913
-
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
-
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano and T. Mukai, "InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode", Jpn. J. Appl. Phys., vol. 41, L1431-L1433, 2002
-
(2002)
Jpn. J. Appl. Phys
, vol.41
-
-
Yamada, M.1
Mitani, T.2
Narukawa, Y.3
Shioji, S.4
Niki, I.5
Sonobe, S.6
Deguchi, K.7
Sano, M.8
Mukai, T.9
-
2
-
-
34248654893
-
Ultra-High Efficiency White Light Emitting Diodes
-
Y. Narukawa, J. Narita, T. Sakamoto, K, Deguchi, T. Ya-mada and T. Mukai, "Ultra-High Efficiency White Light Emitting Diodes", Jpn. J. Appl. Phys., vol. 45, L1084-L1086, 2006
-
(2006)
Jpn. J. Appl. Phys
, vol.45
-
-
Narukawa, Y.1
Narita, J.2
Sakamoto, T.3
Deguchi, K.4
Ya-mada, T.5
Mukai, T.6
-
3
-
-
0029779805
-
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes", Jpn. J. Appl. Phys., vol. 35, pp L74-L76, 1996.
-
(1996)
Jpn. J. Appl. Phys
, vol.35
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
-
4
-
-
0348170959
-
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
-
S. Masui, Y. Matsuyama, T. Yanamoto, T. Kozaki, S. Nagahama and T. Mukai, "365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy", Jpn. J. Appl. Phys., Vol. 42, pp L1318-L1320, 2003.
-
(2003)
Jpn. J. Appl. Phys
, vol.42
-
-
Masui, S.1
Matsuyama, Y.2
Yanamoto, T.3
Kozaki, T.4
Nagahama, S.5
Mukai, T.6
-
5
-
-
21844447108
-
Recent progress of AlInGaN laser diodes
-
S. Nagahama, Y. Sugimoto, T. Kozaki and T. Mukai, "Recent progress of AlInGaN laser diodes", Proceeding of SPIE, vol.5738, pp 57-62, 2005.
-
(2005)
Proceeding of SPIE
, vol.5738
, pp. 57-62
-
-
Nagahama, S.1
Sugimoto, Y.2
Kozaki, T.3
Mukai, T.4
-
6
-
-
0344975184
-
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm
-
Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita and S. Nakamura, "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm", Appl. Phys. Lett., vol. 70, pp. 981-983, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 981-983
-
-
Narukawa, Y.1
Kawakami, Y.2
Funato, M.3
Fujita, S.4
Fujita, S.5
Nakamura, S.6
-
7
-
-
0001212678
-
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
-
S. Chichibu, K. Wada, S. Nakamura, "Spatially resolved cathodoluminescence spectra of InGaN quantum wells", Appl. Phys. Lett., vol. 71, pp. 2346-2348, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 2346-2348
-
-
Chichibu, S.1
Wada, K.2
Nakamura, S.3
-
8
-
-
0001141036
-
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
-
K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D.Hara, Y. Kumagai, A. Koukitu, and H. Seki, "Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate.", Jpn. J. Appl. Phys., vol. 40, pp L140-L143, 2001.
-
(2001)
Jpn. J. Appl. Phys
, vol.40
-
-
Motoki, K.1
Okahisa, T.2
Matsumoto, N.3
Matsushima, M.4
Kimura, H.5
Kasai, H.6
Takemoto, K.7
Uematsu, K.8
Hirano, T.9
Nakayama, M.10
Nakahata, S.11
Ueno, M.12
Hara, D.13
Kumagai, Y.14
Koukitu, A.15
Seki, H.16
-
9
-
-
0141567921
-
GaN-based laser diodea emitting from ultraviolet to blue-green
-
S. Nagahama, M.Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, K. Kawata, T. Murayama and T. Mukai, "GaN-based laser diodea emitting from ultraviolet to blue-green", Proceeding of SPIE, vol.4995, pp 108-116, 2003.
-
(2003)
Proceeding of SPIE
, vol.4995
, pp. 108-116
-
-
Nagahama, S.1
Sano, M.2
Yanamoto, T.3
Morita, D.4
Miki, O.5
Sakamoto, K.6
Yamamoto, M.7
Matsuyama, Y.8
Kawata, K.9
Murayama, T.10
Mukai, T.11
-
10
-
-
0035328412
-
Wavelength Dependence of InGaN Laser Diode Characteristics
-
S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength Dependence of InGaN Laser Diode Characteristics", Jpn. J. Appl. Phys., vol. 40, pp 3075-3081, 2001.
-
(2001)
Jpn. J. Appl. Phys
, vol.40
, pp. 3075-3081
-
-
Nagahama, S.1
Yanamoto, T.2
Sano, M.3
Mukai, T.4
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