GaN-based high-power laser diodes

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 248-252

  Miyajima, Takao ^a   Yoshida, Hiroshi ^a   Yanashima, Katsunori ^a   Yamaguchi, Takashi ^a   Asatsuma, Tsunenori ^a   Funato, Kenji ^a   Hashimoto, Shigeki ^a   Nakajima, Hiroshi ^a   Ozawa, Masafumi ^a   Kobayashi, Toshimasa ^a   Tomiya, Shigetaka ^a   Asano, Takeharu ^a   Uchida, Shiro ^a   Kijima, Satoru ^a   Tojyo, Tsuyoshi ^a   Hino, Tomonori ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

AlxGa1 xN burying layer; Buried ridge structure; Gain guiding; Index step; Refractive index guiding; Ridge structure

Indexed keywords

GALLIUM NITRIDE; HIGH POWER LASERS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS;

BURIED-RIDGE STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0035933026     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00758-3     Document Type: Article

References (19)