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Volumn 95, Issue 8, 2009, Pages

M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers

(10) Lin, You Da a Huang, Chia Yen a Hardy, Matthew T a Hsu, Po Shan a Fujito, Kenji b Chakraborty, Arpan a Ohta, Hiroaki a Speck, James S a Denbaars, Steven P a Nakamura, Shuji a

a University of California (United States)

b MITSUBISHI CHEMICAL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ASYMMETRIC CLADDING; FACET COATING; GAN TECHNOLOGY; INDIUM CONTENT; INTERNAL LOSS; LASER DIODES; LASER STRUCTURES; LASING WAVELENGTH; M-PLANE; N-ALGAN; NONPOLAR M-PLANE; OPTICAL CONFINEMENT; OPTICAL CONFINEMENT FACTORS; OPTICAL MODES; PEAK POSITION; PURE BLUE; SIMULATION RESULT; WAVE-GUIDING;

GALLIUM NITRIDE; LASERS; LIGHT TRANSMISSION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM;

LASER CLADDING;

EID: 69549122524 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212146 Document Type: Article

Times cited : (23)

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