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Volumn 2, Issue 2, 2009, Pages

Continuous-wave operation of InGaN/GaN laser diodes on semipolar (112̄2) plane gallium nitrides

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LADDER NETWORKS; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

EID: 60349124797     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.021002     Document Type: Article
Times cited : (24)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.