In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 10, 2010, Pages 2226-2232

  Wei, Q Y ^a   Li, T ^a   Wu, Z H ^a   Ponce, F A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

III V semiconductors; Non polar growth; Piezoelectric polarization; Spontaneous polarization

Indexed keywords

ALGAN/GAN; GAN-BASED HETEROSTRUCTURES; HETEROSTRUCTURES; II-IV SEMICONDUCTORS; IN-PLANE; IN-PLANE POLARIZATION; INGAN/GAN; LATERAL DIMENSION; NON-POLAR; PIEZOELECTRIC POLARIZATIONS; PLANARITY; POLAR GROWTH; POLARIZATION FIELD; SPONTANEOUS POLARIZATIONS;

CRYSTALS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTOR GROWTH;

CRYSTAL ORIENTATION;

EID: 77957914195     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925632     Document Type: Article

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