Polarization field crossover in semi-polar InGaN/GaN single quantum wells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2378-2381

  Shen, H ^a   Garrett, G A ^a   Wraback, M ^a   Zhong, H ^b   Tyagi, A ^b   DenBaars, S P ^b   Nakamura, S ^b   Speck, J S ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electroreflectance; InGaN GaN; Polarization field; Quantum wells

Indexed keywords

ELECTROREFLECTANCE; FORWARD BIAS VOLTAGE; FRANZ-KELDYSH OSCILLATIONS; INGAN QUANTUM WELLS; INGAN/GAN; NON-POLAR; POLARIZATION FIELD; QUANTUM WELL; REVERSE BIAS VOLTAGE; SINGLE QUANTUM WELL; TURN ON VOLTAGE; ZERO-CROSSINGS;

ELECTRIC FIELDS; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS;

BIAS VOLTAGE;

EID: 78449244922     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983893     Document Type: Article

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