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Volumn 15, Issue 12, 2007, Pages 7730-7736

Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DATA ACQUISITION; EMISSION SPECTROSCOPY; FERMI LEVEL; GALLIUM NITRIDE; INDIUM; WAVELENGTH;

EID: 34250189540     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.007730     Document Type: Article
Times cited : (74)

References (15)
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    • High-power and wide wavelength range GaN-baser laser diodes
    • T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, "High-power and wide wavelength range GaN-baser laser diodes," Proc. SPIE 6133, 613306-1 (2006).
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    • Kozaki, T.1    Matsumura, H.2    Sugimoto, Y.3    Nagahama, S.4    Mukai, T.5
  • 7
    • 0015667898 scopus 로고
    • cw degradation at 300° K of GaAs double-heterostructure junction laser. II. Electronic gain
    • B. W. Hakki and T. L. Paoli, "cw degradation at 300° K of GaAs double-heterostructure junction laser. II. Electronic gain," J. Appl. Phys. 44, 4113 (1973).
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    • Hakki, B.W.1    Paoli, T.L.2
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    • A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors
    • L. Bányai and S. W. Koch, "A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors," Z. Phys. B - Condensed Matter 63, 283 (1986).
    • (1986) Z. Phys. B - Condensed Matter , vol.63 , pp. 283
    • Bányai, L.1    Koch, S.W.2
  • 13
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    • Optical properties of edge-emitting lasers: Measurement and simulation
    • J. Piprek, Ed, Wiley VCH, New York
    • U. T. Schwarz and B. Witzigmann, "Optical properties of edge-emitting lasers: measurement and simulation," in "Nitride semiconductor devices: principles and simulation," J. Piprek, Ed. (Wiley VCH, New York, 2007).
    • (2007) Nitride semiconductor devices: Principles and simulation
    • Schwarz, U.T.1    Witzigmann, B.2
  • 14
    • 0035442547 scopus 로고    scopus 로고
    • An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN-material system designed for quantum well laser operation
    • A. A. Yamaguchi, M. Kuramoto, M. Nido, and M. Mizuta, "An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN-material system designed for quantum well laser operation," Semicond. Sci. Technol. 16, 763 (2001).
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    • Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range
    • U. T. Schwarz, K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai, "Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range," Proc. SPIE 6485, 648506 (2007).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.