Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 59-62

  Hansen, M ^a   Abare, A C ^a   Kozodoy, P ^a   Katona, T M ^a   Craven, M D ^a   Speck, J S ^a   Mishra, U K ^a   Coldren, L A ^a   DenBaars, S P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

QUANTUM WELL LASERS;

EID: 0033222017     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<59::AID-PSSA59>3.0.CO;2-B     Document Type: Article

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