Germanium: Epitaxy and its applications

Progress in Crystal Growth and Characterization of Materials

Volumn 56, Issue 3-4, 2010, Pages 146-174

  Bosi, Matteo ^a   Attolini, Giovanni ^a  

^a IMEM CNR   (Italy)

Author keywords

Electronic; Epitaxy; Germanium; Growth; Photovoltaic

Indexed keywords

BAND GAP ENGINEERING; CELL PHONE; CHEMICAL VAPOUR DEPOSITION; CURRENT LIMITS; DEVICE DESIGN; ELECTRONIC; EPITAXY; GAAS; GATE OXIDE; GROWTH; HIGH EFFICIENCY; HIGH-EFFICIENCY SOLAR CELLS; HIGH-SPEED ELECTRONICS; III-V SOLAR CELLS; KEY MATERIALS; LOW-ENERGY PLASMA; MATERIAL SCIENCE; METAL-ORGANIC; NOVEL DEVICES; NOVEL PRECURSORS; PHOTOVOLTAIC; PHOTOVOLTAICS; POLYMERIZATION CATALYSTS; SI-GE ALLOYS; SILICON DEVICES; SOLAR CONCENTRATION; SPACE USE; SPINTRONICS DEVICE; STRAINED SIGE/SI; THERMOPHOTOVOLTAIC DEVICES; THERMOPHOTOVOLTAICS; THIN LAYERS;

ATOMIC LAYER DEPOSITION; CELLULAR TELEPHONE SYSTEMS; CHEMICAL BEAM EPITAXY; DEPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; MATERIALS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOVOLTAIC EFFECTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYETHYLENE TEREPHTHALATES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SOLAR CELLS; STANDARDIZATION; SUBSTRATES; SURFACE ANALYSIS; TELECOMMUNICATION EQUIPMENT; THERMOPLASTICS;

GERMANIUM;

EID: 78649456528     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2010.09.002     Document Type: Article

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