MOVPE growth of homoepitaxial germanium

Journal of Crystal Growth

Volumn 310, Issue 14, 2008, Pages 3282-3286

  Bosi, M ^a   Attolini, G ^a   Ferrari, C ^a   Frigeri, C ^a   Rimada Herrera, J C ^a   Gombia, E ^a   Pelosi, C ^a   Peng, R W ^b  

^a CNR   (Italy)

^b NANJING UNIVERSITY   (China)

Author keywords

A1. Characterisation; A2. Metal organic vapour phase epitaxy; B2. Semiconducting germanium

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL LAYERS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CARRIER GAS; CRYSTALLOGRAPHIC STRUCTURE; ISOBUTYLGERMANE (IBUGE);

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 44749087643     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.009     Document Type: Article

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