Analysis of germanium epiready wafers for III-V heteroepitaxy

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4803-4807

  Rey Stolle, Ignacio ^a   Barrigón, Enrique ^a   Galiana, Beatriz ^a   Algora, Carlos ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

A1. Substrates; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting germanium

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPILAYERS; HIGHER ORDER STATISTICS; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GERMANIUM; SURFACE ROUGHNESS;

EPI-READY SUBSTRATES; GERMANIUM SUBSTRATES; HIGH TEMPERATURE; MORPHOLOGICAL ANALYSIS; NANOMETRES; RMS ROUGHNESS; ROUGHNESS PARAMETERS; SURFACE PROCESS;

SUBSTRATES;

EID: 56249087168     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.116     Document Type: Article

References (19)

1. Depuydt B., Theuwis A., and Romandic I. Mater. Sci. Semicond. Process. 9 (2006) 437
2. K. Dessein, Role of the germanium substrate manufacturer in the CPV market, in: Presentation Given at 2007 Marburg Workshop on Concentrating Photovoltaic Optics and Power, downloadable at 〈http://concentrating-pv.org/papers.html〉.
3. Compound Semiconductor Industry September-December 2007 Review: Materials and Equipment, Strategy Analytics Report, October 2007.
4. K. Dessein, B. Depuydt, W. Geens and C. Quaeyhaegens, Zooming in on the surface of state-of-the-art germanium wafers, Paper Presented at ALTECH 07: Analytical Techniques for Semiconductor Materials and Process Characterization V, Munich (Germany), September 2007. Abstract downloadable at 〈http://www.chemie.uni-frankfurt.de/aac/ak_kolbesen/english/conferences/abstractfolder/Dessein_Umicore_abstr_ALTECH-2007_v2.pdf〉.
5. Kalem S., Romandic I., and Theuwis A. Mater. Sci. Semicond. Process. 9 (2006) 753
6. B. Galiana, I. Rey-Stolle, E. Barrigón, V. Corregidor, C. Algora, "Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium", Proceedings of the ninth International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS08), Todelo (Spain), July 2008.
7. Friedman D.J., and Olson J.M. Prog. Photovoltaics Res. Appl. 9 (2001) 179
8. Horcas I., Fernandez R., Gomez-Rodriguez J.M., Colchero J., Gomez-Herrero J., and Baro A.M. Rev. Sci. Instrum. 78 (2007) 013705
9. J. Olson, W.E. McMahon, in: Proceedings of the Second World Conference on Photovoltaic Solar Energy Conversion, vol. 3, 1998, p. 3540.
10. Allwood D.A., Carline R.T., Mason N.J., Pickering C., Tanner B.K., and Walker P.J. Thin Solid Films 364 (2000) 33
11. Marx E., Malik I.J., Strasser Y.E., Bristow T., Poduje N., and Stover J.C. J. Vac. Sci. Technol. B 20 1 (2002) 31
12. Sun S., Sun Y., Liu Z., Lee D.-Ick., Peterson S., and Pianetta P. Appl. Phys. Lett. 88 (2006) 21903
13. Gan S., Li L., Nguyen T., Qi H., Hicks R.F., and Yang M. Surf. Sci. 395 1 (1998) 69
14. Li Y., Salviati G., Bongers M.M.G., Lazzarini L., Nasi L., and Giling L.J. J. Crystal Growth 163 (1996) 195
15. Ting S.M. J. Appl. Phys. 87 5 (2000) 2618
16. Gan S., Li L., Begarney M.J., Law D., and Han B.-K. J. Appl. Phys. 85 3 (1999) 2004
17. W.E. McMahon, J.M. Olson, in: Proceedings of the 12th American Conference on Crystal Growth Epitaxy, 2000.
18. McMahon W.E., Kibbler A.E., and Olson J.M. Surf. Sci. 571 (2004) 146
19. Okumura H., Akane T., and Matsumoto S. Appl. Surf. Sci. 125 (1998) 125