Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Shin, Byungha ^a   Leonard, John P ^a,b   McCamy, James W ^a,c   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

^b University of Pittsburgh   (United States)

^c PPG Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGETIC SPECIES; FEATURE SEPARATION; HOMOEPITAXIAL GROWTH MORPHOLOGY; PYRAMIDAL MOUNDS;

FILM GROWTH; GERMANIUM; KINETIC ENERGY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 27444434755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108115     Document Type: Article

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