Study of silicon-germanium interdiffusion from pure germanium deposited layers

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 110-113

  Gavelle, Mathieu ^a   Bazizi, El Mehdi ^a   Scheid, Emmanuel ^a   Armand, Claude ^b   Fazzini, Pier Francesco ^a   Marcelot, Olivier ^a   Campidelli, Yves ^c   Halimaoui, Aomar ^c   Cristiano, Fuccio ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b INSA   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Boltzmann Matano; CVD; Defects; Germanium; Interdiffusion; MCs2+; Modeling; Silicon; SIMS

Indexed keywords

SECONDARY ION MASS SPECTROMETRY; SI-GE ALLOYS; SILICA; SILICON; SILICON OXIDES;

AS-GROWN; BOLTZMANN-MATANO; DEPOSITED LAYER; GERMANIUMS (GE); INTERDIFFUSION; MC2 +; MODELING; SECONDARY ION-MASS SPECTROMETRY; SI INTERDIFFUSION; SILICON GERMANIUMS (SIGE);

GERMANIUM;

EID: 56949103259     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.015     Document Type: Article

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