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Electrochemical and Solid-State Letters

Volumn 10, Issue 11, 2007, Pages 313-316

Reduced-pressure chemical vapor deposition of epitaxial Ge films on Si(001) substrates using GeCl4

(6) Park, Ji Soo a Curtin, Michael a Major, Cheryl a Bengtson, Susan a Carroll, Mark a Lochtefeld, Anthony a

a AmberWave Systems Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; GROWTH KINETICS; SEMICONDUCTING GERMANIUM; SUBSTRATES; SURFACE ROUGHNESS;

CRYSTALLINITY; REDUCED-PRESSURE CHEMICAL VAPOR DEPOSITION; TEMPERATURE RANGE;

EPITAXIAL FILMS;

EID: 34548491992 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2771069 Document Type: Article

Times cited : (8)

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