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Volumn 315, Issue 1-2, 1998, Pages 49-56

Growth of Ge layers on Si(100) monitored by in situ ellipsometry

Author keywords

Atomic force microscopy (AFM); Chemical vapour deposition (CVD); Ellipsometry; Surface morphology

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; MATHEMATICAL MODELS; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0032473337     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00585-3     Document Type: Article
Times cited : (8)

References (44)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.