5-7-5 line defects on AsSi(100): A general stress-relief mechanism for V/IV surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 3, 2006, Pages

  McMahon, W E ^a   Batyrev, Iskander G ^a,b   Hannappel, T ^a,c   Olson, J M ^a   Zhang, S B ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745752096     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.033304     Document Type: Article

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