Electronic and atomic structure of Ge/Si(111)-7 × 7 in the initial stages of Ge chemisorption

Surface Science

Volumn 371, Issue 1, 1997, Pages 63-78

  Stauffer, Louise ^a   Sonnet, Philippe ^a   Minot, Christian ^b  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b LABORATOIRE DE CHIMIE THÉORIQUE   (France)

Author keywords

Adatoms; Chemisorption; Semi empirical models and model calculations; Silicon germanium; Surface structure

Indexed keywords

ADDITION REACTIONS; ATOMS; CALCULATIONS; CHEMISORPTION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; GERMANIUM; MATHEMATICAL MODELS; REACTION KINETICS; SILICON; SUBSTITUTION REACTIONS; SURFACE STRUCTURE;

ADATOMS; PERMUTATION;

SURFACES;

EID: 0030814938     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00986-7     Document Type: Article

References (41)

1. K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama, Jpn. J. Appl. Phys. 22 (1982) 1482.
2. E.G. Mc Rae and R.A. Malic, Surf. Sci. 165 (1986) 191.
3. J.M. Seo, D.L. Doering, D.S. Bluck and I.E. Rowe, J. Vac. Sci. Technol. A 4 (1986) B94.
4. A.W. Denier van der Gon, R.M. Tromp and M.C. Reuter Thin Solid Films 236 (1993) 140.
5. E.G. Mc Rae, H.-J. Gossmann and L.C. Feldmann, Surf. Sci. 146 (1984) L540.
6. R.S. Becker, J.A. Golovchenko and B.S. Schwartzentruber, Phys. Rev. B 32 (1985) 8455; R.S. Becker, B.S. Schwartzentruber and J.S. Vickers, J. Vac. Sci. Technol. A 6 (1988) 472.
7. R.S. Becker, J.A. Golovchenko and B.S. Schwartzentruber, Phys. Rev. B 32 (1985) 8455; R.S. Becker, B.S. Schwartzentruber and J.S. Vickers, J. Vac. Sci. Technol. A 6 (1988) 472.
8. B.N. Dev, G. Materlik, F. Grey, R.L. Johnson and M. Clausnitzer, Phys. Rev. Lett. 57 (1986) 3058.
9. H.-J. Gossmann, J.C. Bean, L.C. Feldman and W.M. Gibson, Surf. Sci. 138 (1984) L175.
10. P. Martensson, Wei-Xin Ni, G.V. Hansson, J.M. Nicholls and B. Reihl, Phys. Rev. B 36 (1987) 5974.
11. L. Stauffer, S. Van, D. Bolmont, J.J. Koulmann and C. Minot, Surf. Sci. 307/308 (1994) 274.
12. J.A. Carlisle, T. Miller and T.-C. Chiang, Phys. Rev. B 49 (1994) 13600.
13. K. Kajiyama, Y. Tanishiro and K. Takayanagi, Surf. Sci. 222 (1989) 38.
14. L. Stauffer and C. Minot, Surf. Sci. 331-333 (1995) 606.
15. S. Lagomarsino, F. Scarinci, P. Castrucci, C. Giannini, E. Fontes and J.R. Patel, Appl. Surf. Sci. 56-58 (1992) 402.
16. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1981) 1502.
17. S.Y. Tong, H. Huang, C.M. Wei, W.E. Packard, F.K. Men, G. Glander and M.B. Webb, J. Vac. Sci. Technol. A 6 (1988) 615.
18. R.D. Meade and D. Vanderbilt, Phys. Rev. B 40 (1989) 3905
19. G. Brocks, P.J. Kelly and R. Car, Surf. Sci. 269/270 (1992) 860.
20. R. Hoffmann, J. Chem. Phys. 39 (1963) 1397; M.-H. Whangbo and R. Hoffmann, J. Am. Chem. Soc. 100 (1978) 6093; C. Minot, M.A. Van Hove and G.A. Somorjai, Surf. Sci. 127 (1983) 441.
21. R. Hoffmann, J. Chem. Phys. 39 (1963) 1397; M.-H. Whangbo and R. Hoffmann, J. Am. Chem. Soc. 100 (1978) 6093; C. Minot, M.A. Van Hove and G.A. Somorjai, Surf. Sci. 127 (1983) 441.
22. R. Hoffmann, J. Chem. Phys. 39 (1963) 1397; M.-H. Whangbo and R. Hoffmann, J. Am. Chem. Soc. 100 (1978) 6093; C. Minot, M.A. Van Hove and G.A. Somorjai, Surf. Sci. 127 (1983) 441.
23. G.X. Quian and D.J. Chadi, Phys. Rev. B 35 (1987) 1288.
24. M. Lannoo and P. Friedel, in: Atomic and Electronic Structure at Surfaces - Theoretical Foundations (Springer, Berlin, 1991), ch. 4.
25. L. Stauffer, S. Van, D. Bolmont, J.J. Koulmann and C. Minot, Solid State Commun. 85 (1993) 935.
26. D.L. Thorn and R. Hoffmann, Inorg. Chem. 17 (1978) 126.
27. A.T. Nguyen and R. Hoffmann, J. Am. Chem. Soc. 100 (1978) 110.
28. B.H. Mahan, in: University Chemistry, Table 12-2 (Addison-Wesley, Reading, MA, 1967).
29. P. Pyykko and L.L. Lehr, Inorg. Chem. 20 (1981) 1950, supplementary material.
30. L. Stauffer and C. Minot, Catal. Lett. 23 (1994) 1.
31. J.J. Boland, Surf. Sci. 244 (1991) 1; Adv. Phys. 42 (1993) 129.
32. J.J. Boland, Surf. Sci. 244 (1991) 1; Adv. Phys. 42 (1993) 129.
33. W. Mönch, in: Semi-conductor Surfaces (Springer, Berlin, 1992).
34. M. Roy and Y. Borensztein, Surf. Sci. 331-333 (1995) 453.
35. R. Dovesi, C. Pisani, C. Roetti, M. Causà and V.R. Saunders, CRYSTAL 88, QCPE program No 577 (Bloomington, Indiana, 1989); R. Dovesi, V.R. Saunders and C. Roetti, CRYSTAL 92 User Documentation (Torino and Daresbury, 1992); C. Pisani, R. Dovesi and C. Roetti, in: Hartree-Fock Ab-initio Treatment of Crystalline Systems, Lecture Notes in Chemistry, Vol.48 (Springer, Heidelberg, 1988).
36. R. Dovesi, C. Pisani, C. Roetti, M. Causà and V.R. Saunders, CRYSTAL 88, QCPE program No 577 (Bloomington, Indiana, 1989); R. Dovesi, V.R. Saunders and C. Roetti, CRYSTAL 92 User Documentation (Torino and Daresbury, 1992); C. Pisani, R. Dovesi and C. Roetti, in: Hartree-Fock Ab-initio Treatment of Crystalline Systems, Lecture Notes in Chemistry, Vol.48 (Springer, Heidelberg, 1988).
37. R. Dovesi, C. Pisani, C. Roetti, M. Causà and V.R. Saunders, CRYSTAL 88, QCPE program No 577 (Bloomington, Indiana, 1989); R. Dovesi, V.R. Saunders and C. Roetti, CRYSTAL 92 User Documentation (Torino and Daresbury, 1992); C. Pisani, R. Dovesi and C. Roetti, in: Hartree-Fock Ab-initio Treatment of Crystalline Systems, Lecture Notes in Chemistry, Vol.48 (Springer, Heidelberg, 1988).
38. These results are derived from EHT calculations on the Si and Ge diamond structures done with and without p Orbitals at the Γ point.
39. F. Herman and S. Skillman, Atomic Structure Calculations (Prentice Hall, Englewoods Cliffs, 1963).
40. C.F. Fischer, Atomic Data 4 (1972) 301.
41. A.L. Allred and E.G. Rochow, J. Inorg. Nucl. Chem. 5 (1958) 264.