High-curie-temperature ferromagnetism in self-organized Ge 1-xMnx nanocolumns

Nature Materials

Volumn 5, Issue 8, 2006, Pages 653-659

  Jamet, Matthieu ^a   Barski, André ^a   Devillers, Thibaut ^a   Poydenot, Valier ^a   Dujardin, Romain ^a   Bayle Guillemaud, Pascale ^a   Rothman, Johan ^b   Bellet Amalric, Edith ^a   Marty, Alain ^a   Cibert, Joël ^c   Mattana, Richard ^a,e,f   Tatarenko, Serge ^d  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d Laboratoire de Spectrometrie Physique   (France)

^e CNRS   (France)

^f UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; INSULATING MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; NANOSTRUCTURED MATERIALS; SCATTERING; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL TEMPERATURE; METAL-INSULATOR TRANSITION; SEMICONDUCTOR NANOSTRUCTURES; SPIN SCATTERING;

FERROMAGNETISM;

EID: 33746633462     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat1686     Document Type: Article

References (44)

1. MacDonald, A. H., Schiffer, F. & Samarth, N. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As. Nature Mater. 4, 195-202 (2005).
2. Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76, 323-410 (2004).
3. Dietl, T. Ferromagnetic semiconductors. Semicond. Sci. Technol. 17, 377-392 (2002).
4. Timm, C. Disorder effects in diluted magnetic semiconductors. J. Phys. Condens. Matter 15, R1865-R1896 (2003).
5. Sato, K., Katayama-Yoshida, H. & Dederichs, P. H. High Curie temperature and nano-scale spinodal decomposition phase in dilute magnetic semiconductors. Jpn J. Appl. Phys. 44, L948-L951 (2005).
6. Ohno, H., Munekata, H., Penney, T., von Molnar, S. & Chang, L. L. Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors. Phys. Rev. Lett. 68, 2664-2667 (1992).
7. Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281, 951-956 (1998).
8. xTe. Phys. Rev. B 63, 085201 (2001).
9. Jungwirth, T. et al Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors. Phys. Rev. B 72, 165204 (2005).
10. 1-x. Science 295, 651-654 (2002).
11. 1-x dilute magnetic semiconductor. Appl. Phys. Lett. 86, 152507-152509 (2005).
12. Cho, S. et al Ferromagnetism in Mn-doped Ge. Phys. Rev. B 66, 033303 (2002).
13. x films. Phys. Rev. B 72, 165203 (2005).
14. Tsui, F. et al. Novel germanium-based magnetic semiconductors. Phys. Rev. Lett. 91, 177203-177206 (2003).
15. Braak, H. et al. Magnetic characteristics of epitaxial Ge(Mn,Fe) diluted films-a new room temperature magnetic semiconductor? J. Magn. Magn. Mater. 286, 46-50 (2005).
16. Kang, J.-S. et al. Spatial chemical inhomogen and and local electronic structure of Mn-doped Ge ferromagnetic semiconductors. Phys. Rev. Lett. 94, 147202 (2005).
17. Sugahara, S., Lee, K. L., Yada, S. & Tanaka, M. Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films. Jpn J. Appl. Phys. 44, L1426-L1429 (2005).
18. Dormann, J. L., Fiorani, D. & Tronc, E. Advances in Chemical Physics (Wiley, New York, 1997).
19. Goswami, R. et al. Growth of ferromagnetic nanoparticles in Ge:Fe thin films. Appl. Phys. Lett. 86, 032509 (2005).
20. Goswami, R., Kioseoglou, G., Hanbicki, A. T., Jonker, B. T. & Spanos, G. Formation of Cr-germanide nanoparticles during growth of epitaxial Ge-Cr thin films. Acta Mater. 52, 2419-2427 (2004).
21. Park, Y. D. et al Magnetoresistance of Mn:Ge ferromagnetic nanodusters in a diluted magnetic semiconductor matrix. Appl. Phys. Lett. 78, 2739-2741 (2001).
22. D'Orazio, F. et al. Magnetooptical study of Mn ions implanted in Ge. IEEE Trans. Magn. 38, 2856 (2002).
23. Massalski, T. B. (ed.) Binary Alloy Phase Diagrams 2nd edn, Vol. 2, 1964 (American Society for Metals, Metals Park, Ohio, 1990).
24. Wachtel, E. & Henig, E.-T. Aufbau des systems mangan-germanium. Z. Metallkd. 60, 243-248 (1969)
25. x alloys on Si(100). J. Appl. Phys. 98, 033512 (2005).
26. Schulthess, T. C. & Butler, W. H. Electronic structure and magnetic interactions in Mn doped semiconductors. J. Appl. Phys. 89, 7021-7023 (2001).
27. Beleggia, M., Tandon, S., Zhu, Y. & De Graef, M. On the magnetostatic interactions between nanoparticles of arbitrary shape. J. Magn. Magn. Mater. 278, 270-284 (2004).
28. Fruchart, O., Klaua, M., Bartel, J. & Kirschner, J. Self-organized growth of nanosized vertical magnetic Co pillars on Au(111). Phys. Rev. Lett. 83, 2769-2772 (1999).
29. Darques, M., Encinas, A., Vila, L. & Piraux, L. Tailoring of the c-axis orientation and magnetic anisotroyin electrodeposited Co nanowires. J. Phys. C 16, S2279-S2286 (2004).
30. Died, T., Ohno, H. & Matsukura, F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys. Sev. B 63, 195205 (2001).
31. Kossacki, P. et al. Spin engineering of carrier-induced magnetic ordering in (Cd,Mn)Te quantum wells. Physica E 21, 943-946 (2004).
32. Song, Y. P. et al. Physical origin of the ferromagnetic ordering above room temperature in GaMnN nanowires. J. Phys. C 17, 5073-5085 (2005).
33. x nanowires. Phys. Rev. B 72, 094415 (2005).
34. Sze, S. M. Physics of Semiconductors Devices (Wiley, New York, 1981).
35. Schklovskii, B. I. & Efros, A. L. Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
36. Woodbury, H. H. & Tyler, W. W. Properties of germanium doped with manganese. Phys. Rev. 100, 659-662 (1955).
37. Solin, S. A., Thio, T., Hines, D. R. & Heremans, J. J. Enhanced room-temperature geometric magnetoresistance in inhomogeneous narrow-gap semiconductors. Science 289, 1530-1532 (2000).
38. xAs. Phys. Rev. B 56, 13103-13112 (1997).
39. Golikova, O. A., Moizhes, B. Y. & Stilbans, L. S. Hole mobility of germanium as a function of concentration and temperature. Sov. Phys. Solid State 3, 2259-2265 (1962).
40. Berkowitz, A. E. et al Giant magnetoresistance in heterogeneous Cu-Co alloys. Phys. Rev. Lett. 68, 3745-3748 (1992).
41. Akinaga, H. et al Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters. Appl. Phys. Lett. 72, 3368-3370 (1998).
42. xSe:In in the weakly localized regime. Phys. Rev. Lett. 56, 508-511 (1986).
43. 0.05Te. Phys. Rev. B 41, 5931-5941 (1990).
44. Chazalviel, J.-N. Spin-dependent Hall effect in semiconductors. Phys. Rev. B 11, 3918-3934 (1975).