Germanium thin film formation by low-pressure chemical vapor deposition

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1423-1429

  Meng, Zhiguo ^a   Jin, Zhonghe ^a   Gururaj, Bhat A ^a   Chu, Paul ^a,b   Kwok, Hoi S ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM; HALL EFFECT; POLYCRYSTALLINE MATERIALS; PYROLYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HALL EFFECT MEASUREMENT; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE GERMANIUM;

THIN FILMS;

EID: 0031117526     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837605     Document Type: Article

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