Smart-cut: A new silicon on insulator material technology based on hydrogen implantation and wafer bonding

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1636-1641

  Bruel, Michel ^a   Aspar, Bernard ^a   Auberton Hervé, Andre Jacques ^b  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Hydrogen implantation; Silicon on insulator; Smart cut; Wafer bonding

Indexed keywords

EID: 0000472026     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1636     Document Type: Article

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