Germanium-on-insulator (GeOI) substrates-A novel engineered substrate for future high performance devices

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 444-448

  Akatsu, Takeshi ^a   Deguet, Chrystel ^b   Sanchez, Loic ^b   Allibert, Frédéric ^a   Rouchon, Denis ^b   Signamarcheix, Thomas ^a   Richtarch, Claire ^a   Boussagol, Alice ^a   Loup, Virginie ^b   Mazen, Frédéric ^b   Hartmann, Jean Michel ^b   Campidelli, Yves ^c   Clavelier, Laurent ^b   Letertre, Fabrice ^a   Kernevez, Nelly ^b   Mazure, Carlos ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Germanium on insulator (GeOI)

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SUBSTRATES;

GERMANIUM-ON-INSULATOR (GEOI); INTEGRATION PLATFORM; OPTOELECTRONIC FUNCTIONS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33845198704     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.077     Document Type: Article

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