Homo and hetero epitaxy of Germanium using isobutylgermane

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 404-406

  Attolini, G ^a   Bosi, M ^a   Musayeva, N ^a   Pelosi, C ^a   Ferrari, C ^a   Arumainathan, S ^a   Timo G ^b  

^a CNR   (Italy)

^b CESI RICERCA   (Italy)

Author keywords

Germanium; MOVPE; surfactant

Indexed keywords

ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; MOLECULAR BEAM EPITAXY; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

ATOMIC FORCES; ELECTRONIC MATERIALS; EPITAXIAL QUALITIES; GAAS SUBSTRATES; HETERO EPITAXIES; HIGH-RESOLUTION; MOVPE; ORGANIC VAPORS; ROHM AND HAAS; SURFACTANT; X-RAY DIFFRACTIONS;

EPITAXIAL LAYERS;

EID: 54849418863     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.137     Document Type: Article

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