A group-IV ferromagnetic semiconductor: MnxGe1-x

Science

Volumn 295, Issue 5555, 2002, Pages 651-654

  Park, Y D ^a   Hanbicki, A T ^a   Erwin, S C ^a   Hellberg, C S ^a   Sullivan, J M ^a   Mattson, J E ^a   Ambrose, T F ^a   Wilson, A ^a   Spanos, G ^a   Jonker, B T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; EPITAXIAL GROWTH; MICROELECTRONICS; PERCOLATION (SOLID STATE); SEMICONDUCTING MANGANESE COMPOUNDS;

TRANSITION TEMPERATURES;

FERROMAGNETIC MATERIALS;

FERROMAGNETIC MATERIAL; GERMANIUM; MANGANESE;

CURIE POINT; MANGANESE; SEMICONDUCTOR INDUSTRY;

ARTICLE; CALCULATION; CHEMICAL INTERACTION; ELECTRIC POTENTIAL; ENERGY TRANSFER; PRIORITY JOURNAL; SEMICONDUCTOR; THEORY;

EID: 18244377771     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1066348     Document Type: Article

References (30)