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Volumn 92, Issue 15, 2008, Pages

A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; GROWTH KINETICS; MONOLAYERS; TEMPERATURE DISTRIBUTION;

HETEROINTERFACE DECREASE; PREDEPOSITION LAYER;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 42349103763 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2901029 Document Type: Article

Times cited : (34)

References (12)

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