Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Zhu, Ming ^a   Chin, Hock Chun ^a   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GERMANIUM; MOSFET DEVICES; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

GATE STACK; ROOT-MEAN-SQUARE ROUGHNESS; SILANE PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 37549014529     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2811859     Document Type: Article

References (18)

1. K. Rajagopalan, J. Abrokwah, R. Droopad, and M. Passlack, IEEE Electron Device Lett., 27, 959 (2006).
2. I. Ok, H. Kim, M. Zhang, T. Lee, F. Zhu, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 2006, 829.
3. H. Shang, M. M. Frank, J. O. Chu, S. W. Bedell, K. W. Guarini, and M. Ieong, IBM J. Res. Dev., 50, 377 (2006).
4. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, A. Stesmans, L.-A. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns, Tech. Dig. - Int. Electron Devices Meet., 2006, 655.
5. E. A. Fitzgerald, Mater. Sci. Eng., B, 124, 8 (2005).
6. T. Akatsu, C. Deguet, L. Sanchez, F. Allibert, D. Rouchon, T. Signamarcheix, C. Richtarch, A. Boussagol, V. Loup, F. Mazen, Mater. Sci. Semicond. Process., 9, 444 (2006).
7. R. Venkatasubramanian, M. L. Timmons, S. Bothra, and J. M. Borrego, J. Cryst. Growth, 112, 7 (1991).
8. M. Kawanaka, N. Iguchi, and J. Sone, IEEE Trans. Electron Devices, 43, 670 (1996).
9. A. D. Chaudhari, L. C. West, C. W. Roberts, and Y. C. Lu, IEEE Photonics Technol. Lett., 7, 526 (1995).
10. M. Zhu, H.-C. Chin, C.-H. Tung, and Y.-C. Yeo, J. Electrochem. Soc., 154, H879 (2007).
11. N. Wu, Q. C. Zhang, C. X. Zhu, D. S. H. Chan, A. Y. Du, N. Balasubramanian, M. F. Li, A. Chin, J. K. O. Sin, and D. L. Kwong, IEEE Electron Device Lett., 25, 631 (2004).
12. B. Salazar-Hernandez, M. A. Vidal, H. Navarro-Contreras, and C. Vazquez-Lopez, Thin Solid Films, 352, 269 (1999).
13. M.-G. Kang and H.-H. Park, J. Vac. Sci. Technol. A, 17, 88 (1999).
14. I. Goldfarb, J. L. Azar, A. Grisaru, E. Grunbaum, and M. Nathan, J. Appl. Phys., 93, 3057 (2003).
15. A. Leycuras and M. G. Lee, Appl. Phys. Lett., 65, 2296 (1994).
16. K. M. Lui, K. P. Chik, and J. B. Xu, Appl. Phys. Lett., 70, 865 (1997).
17. H. Shang, J. O. Chu, X. Wang, P. M. Mooney, K. Lee, J. Ott, K. Rim, K. Chan, K. Guarini, and M. Ieong, VLSI Symp. Tech. Dig., 2004, 204.
18. S. J. Whang, S. J. Lee, F. Gao, N. Wu, C. X. Zhu, L. J. Tang, L. S. Pan, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2004, 307.