Designing novel organogermanium OMVPE precursors for high-purity germanium films

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 684-687

  Woelk, Egbert ^a   Shenai Khatkhate, Deodatta V ^a   DiCarlo Jr , Ronald L ^a   Amamchyan, Artashes ^a   Power, Michael B ^a   Lamare, Bruno ^a   Beaudoin, Grégoire ^b   Sagnes, Isabelle ^b  

^a ROHM AND HAAS COMPANY   (United States)

^b UNIV PARIS SUD   (France)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Organogermanium compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium

Indexed keywords

CHARACTERIZATION; GERMANIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM;

GERMANIUM SUBSTRATES; ORGANOGERMANIUM HYDRIDES; ORGANOGERMANIUM PRECURSORS; ORGANOMETALLIC VAPOR PHASE EPITAXY;

CRYSTAL GROWTH;

EID: 30344471841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.094     Document Type: Conference Paper

References (4)

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