Atomic layer doping for future Si based devices

ECS Transactions

Volumn 22, Issue 1, 2009, Pages 121-131

  Tillack, B ^a,b   Yamamoto, Y ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; PROCESS CONTROL; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON; SURFACE REACTIONS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; ULSI CIRCUITS;

ATOMIC-LAYER DOPING; ATOMIC-LEVEL PROCESSING; ATOMIC-ORDER SURFACE REACTION CONTROL; CHANGING TEMPERATURE; CLUSTER FORMATIONS; SELECTIVE DEPOSITION; SURFACE ADSORPTION; VERY LOW TEMPERATURES;

SI-GE ALLOYS;

EID: 78649462590     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3152968     Document Type: Conference Paper

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