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Volumn 299, Issue 302, 2002, Pages 137-142

Pulsed laser crystallization and structuring of a-Ge on GaAs

(8) Santos, Paulo V a Trampert, A a Jahn, U a Zanatta, A R b Dondeo, F c Comedi, D c Pudenzi, M A A c Chambouleyron, I c

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b UNIVERSITY OF SÃO PAULO (Brazil)

c UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; INTERFACES (MATERIALS); LASER PULSES; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SOLIDIFICATION; SUBSTRATES;

PULSED LASER CRYSTALLIZATION;

SEMICONDUCTING GERMANIUM;

EID: 0036539085 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00998-X Document Type: Article

Times cited : (5)

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