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Volumn 571, Issue 1-3, 2004, Pages 146-156
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An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces
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Author keywords
Germanium; Low energy electron diffraction (LEED); Phosphine; Phosphorus; Scanning tunneling microscopy; Single crystal surfaces; Surface stress; Surface structure, morphology, roughness, and topography
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Indexed keywords
GERMANIUM;
LOW ENERGY ELECTRON DIFFRACTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOSPHORUS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SINGLE CRYSTALS;
SOLAR CELLS;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
SURFACE TOPOGRAPHY;
BUFFER LAYERS;
PHOSPHINE;
SINGLE CRYSTAL SURFACES;
SURFACE STRESSES;
SURFACE CHEMISTRY;
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EID: 6944229613
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2004.08.008 Document Type: Article |
Times cited : (16)
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References (27)
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