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Volumn 571, Issue 1-3, 2004, Pages 146-156

An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces

Author keywords

Germanium; Low energy electron diffraction (LEED); Phosphine; Phosphorus; Scanning tunneling microscopy; Single crystal surfaces; Surface stress; Surface structure, morphology, roughness, and topography

Indexed keywords

GERMANIUM; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SOLAR CELLS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY;

EID: 6944229613     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.08.008     Document Type: Article
Times cited : (16)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.