Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications

Sensors and Actuators, B: Chemical

Volumn 151, Issue 1, 2010, Pages 39-55

  Soo, Mun Teng ^a,b   Cheong, Kuan Yew ^a,b   Noor, Ahmad Fauzi Mohd ^b  

^a Energy Efficient and Sustainable Semiconductor Research Group (EsReG)   (Malaysia)

^b SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Dielectric layer; Harsh environment; Hydrogen sensor; Metal electrode; MOS capacitor; Silicon carbide (SiC)

Indexed keywords

CAPACITORS; DIELECTRIC DEVICES; ELECTRODES; HYDROGEN; SILICON CARBIDE;

DIELECTRIC LAYER; HARSH ENVIRONMENT; HYDROGEN SENSOR; METAL ELECTRODES; SILICON CARBIDES (SIC);

MOS CAPACITORS;

EID: 78049482864     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.09.059     Document Type: Review

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