AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1330-1334

  Song, Junghui ^a   Lu, Wu ^a   Flynn, Jeffrey S ^b   Brandes, George R ^b  

^a Ohio State University   (United States)

^b ENTEGRIS INC   (United States)

Author keywords

AlGaN; GaN; Gas sensors; H2; Schottky diodes

Indexed keywords

CATALYSIS; CATALYSTS; DISSOCIATION; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; HYDROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN; CATALYTIC METALS; GAN; HYDROGEN DETECTION SENSITIVITY; SCHOTTKY DIODES;

CHEMICAL SENSORS;

EID: 24144452804     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.05.013     Document Type: Article

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