Sensing mechanisms of high temperature silicon carbide field-effect devices

TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers

Volumn 1, Issue , 2003, Pages 416-419

  Tobias, P ^a   Golding, B ^a   Ghosh, R N ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Automotive engineering; Chemical sensors; Hydrogen; Insulation; Metal insulator structures; Passivation; Photoelectricity; Photonic band gap; Silicon carbide; Temperature sensors

Indexed keywords

ACTUATORS; AUTOMOTIVE ENGINEERING; CAPACITANCE; CHEMICAL MODIFICATION; CHEMICAL SENSORS; ENERGY GAP; GAS DETECTORS; HIGH TEMPERATURE OPERATIONS; HYDROGEN; INSULATION; INTERFACE STATES; METAL INSULATOR BOUNDARIES; MICROSYSTEMS; PASSIVATION; PHOTOELECTRICITY; PHOTONIC BAND GAP; SILICON; SILICON CARBIDE; TEMPERATURE SENSORS; TRANSDUCERS;

AUTOMOTIVE EXHAUST; CAPACITANCE-VOLTAGE SPECTROSCOPY; EXPERIMENTAL TECHNIQUES; FIELD-EFFECT DEVICES; METAL INSULATOR INTERFACES; METAL INSULATOR SILICONS; METAL INSULATORS; SENSING MECHANISM;

SOLID-STATE SENSORS;

EID: 84944739471     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2003.1215342     Document Type: Conference Paper

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