SiC field-effect devices operating at high temperature

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 345-350

  Ghosh, Ruby N ^a   Tobias, Peter ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

High temperature; Metal oxide semiconductor (MOS) devices; Reliability, semiconductor insulator interface; Sensor; SiC

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT SEMICONDUCTOR DEVICES; LEAKAGE CURRENTS; MOS DEVICES; RELIABILITY; SENSORS; SILICA;

GATE-LEAKAGE MEASUREMENTS; HIGH TEMPERATURE; POLYTYPES; SEMICONDUCTOR-INSULATOR INTERFACE;

SILICON CARBIDE;

EID: 18244399847     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0108-3     Document Type: Conference Paper

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