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Volumn 74, Issue 1, 1999, Pages 182-189

Silicon compatible materials for harsh environment sensors

Author keywords

[No Author keywords available]

Indexed keywords

MICROSENSORS; PHYSICAL PROPERTIES; SEMICONDUCTING DIAMONDS; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY;

EID: 0032680769     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00296-9     Document Type: Article
Times cited : (95)

References (31)
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    • (1997) Proc. 2nd Micro Materials Berlin , pp. 955
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  • 5
    • 0025418575 scopus 로고
    • 'SIMOX' (Separation by Ion Implantation of Oxygen): A technology for high-temperature silicon sensors
    • Diem B., Truche R., Viollet-Bosson S., Delapierre G. 'SIMOX' (Separation by Ion Implantation of Oxygen): a technology for high-temperature silicon sensors. Sensors and Actuator A. 21-23:1990;1003-1006.
    • (1990) Sensors and Actuator a , vol.2123 , pp. 1003-1006
    • Diem, B.1    Truche, R.2    Viollet-Bosson, S.3    Delapierre, G.4
  • 10
    • 85031624392 scopus 로고    scopus 로고
    • HOMSIC, BMWF founded Research Project, Contract-No.: 414-4013-16 SV023
    • HOMSIC, BMWF founded Research Project, Contract-No.: 414-4013-16 SV023.
  • 12
    • 0000023102 scopus 로고
    • Piezoresistive properties of silicon diffused layers
    • Tufte O.N., Stelzer E.L. Piezoresistive properties of silicon diffused layers. J. Appl. Phys. 34(2):1963;313.
    • (1963) J. Appl. Phys. , vol.34 , Issue.2 , pp. 313
    • Tufte, O.N.1    Stelzer, E.L.2
  • 13
    • 36449002004 scopus 로고
    • Single-crystalline, epitaxial cubic SiC-films grown on (100) Si at 750°C by chemical vapour deposition
    • Golecki I., Reidinger F., Marti J. Single-crystalline, epitaxial cubic SiC-films grown on (100) Si at 750°C by chemical vapour deposition. Appl. Phys. Lett. 60:1992;1703.
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 1703
    • Golecki, I.1    Reidinger, F.2    Marti, J.3
  • 17
    • 0001931169 scopus 로고    scopus 로고
    • Oxygen-free dry etching of a-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge
    • Scofield J.D., Bletzinger P., Ganguly B.N. Oxygen-free dry etching of a-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge. Appl. Phys. Lett. 73(1):1998;76.
    • (1998) Appl. Phys. Lett. , vol.73 , Issue.1 , pp. 76
    • Scofield, J.D.1    Bletzinger, P.2    Ganguly, B.N.3
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.