Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 13-15

  Xu, J P ^a   Lai, P T ^b   Zhong, D G ^a   Chan, C L ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Hydrogen sensors; NO; Oxynitride; Silicon carbide

Indexed keywords

CHEMICAL SENSORS; GATES (TRANSISTOR); HYDROGEN; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); NITROGEN OXIDES; OXIDATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; THIN FILMS;

GATE INSULATOR; HYDROGEN CONCENTRATION; METAL INSULATOR SILICON CARBIDE; OXYNITRIDE; SCHOTTKY HYDROGEN SENSOR;

SCHOTTKY BARRIER DIODES;

EID: 0037249878     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807526     Document Type: Letter

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