SiC-based Schottky diode gas sensors

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1093-1096

  Hunter, G W ^a   Neudeck, P G ^a   Chen, L Y ^a   Knight, D ^a   Liu, C C ^b   Wu, Q H ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

Emission; Gas; High Temperature; Sensor; SiC

Indexed keywords

GAS EMISSIONS; HIGH TEMPERATURE PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

HIGH TEMPERATURE SEMICONDUCTORS;

CHEMICAL SENSORS;

EID: 4243273308     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1093     Document Type: Article

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