Comparison of HF and ozone treated SiC surfaces

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 219-222

  Mikalo, R P ^a   Hoffmann, P ^a   Batchelor, D R ^a   Lloyd Spetz, A ^b   Lundstrom I ^b   Schmeisser D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; COMPOSITION; ETCHING; FIELD EFFECT TRANSISTORS; HYDROFLUORIC ACID; OXIDATION; OXIDES; OZONE; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SYNCHROTRON RADIATION; TEMPERATURE;

ELEMENTAL COMPOSITION; NONDESTRUCTIVE DEPTH PROFILING; THIN OXIDE;

SILICON CARBIDE;

EID: 14344270205     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.219     Document Type: Article

References (15)

1. H. Svenningstorp, P. Tobias, P. Salomonsson, B. Häggendal, I. Lundström, L-G. Ekedahl, and A. Lloyd Spetz, Proc.Euros. XIV, Copenhagen, Denmark (2000); L. Unéus, P. Ljung, R. Wigren, P. Mårt-ensson, L.G. Ekedahl, I. Lundström, A. Lloyd Spetz, ISOEN'2000, Brighton, England, July 24-26, 2000, subm.
2. H. Svenningstorp, P. Tobias, P. Salomonsson, B. Häggendal, I. Lundström, L-G. Ekedahl, and A. Lloyd Spetz, Proc.Euros. XIV, Copenhagen, Denmark (2000); L. Unéus, P. Ljung, R. Wigren, P. Mårt-ensson, L.G. Ekedahl, I. Lundström, A. Lloyd Spetz, ISOEN'2000, Brighton, England, July 24-26, 2000, subm.
3. S. Savage, H. Svenningstorp, L. Unéus, A. Kroutchinine, P. Tobias, L.-G. Ekedahl, I. Lundström, C. Harris, and A. Lloyd Spetz, Conf.Proc.ECSCRM2000, Kloster Banz, Germany, September 3-7, 2000, accepted.
4. S. Zangooie, H. Arwin, I. Lundström and A. Lloyd Spetz, Proc.of ICSCRM'99, Research Triangle Park, NC, USA, October 10-15, (1999), p. 1085.
5. D.R. Batchelor, R. Follath, D. Schmeißer, Proceedings SRI2000, Berlin, submitted.
6. P. Hoffmann, R.P. Mikalo, D. Schmeißer, Solid-State Electronics 44 (2000), p. 837.
7. J. von Borany, R. Grötzschel, K.H. Heinig, A. Markwitz, B. Schmidt, W. Skorupa, H.J. Thees, Solid-State Electronics 43 (1999), p. 1159.
8. F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff, G. Hollinger, Phys.Rev.B.38 (1988) 6084.
9. J. Stöhr, NEXAFS Spectroscopy, Springer, 1996.
10. P.J. Grunthaner, M.H. Hecht, F.J. Grunthaner, J.Appl.Phys. 61 (1987), p. 629.
11. D. Schmeißer, R.D. Schnell, A. Bogen, F.J. Himpsel, D. Rieger, G. Landgren, J.F. Morar, Surface Sci. 172 (1986), p. 455.
12. M. Hollering, N. Sieber, J. Ristein, L. Ley, J.D. Riley, R.C.G. Leckey, F.P. Leisenberger, F.P. Netzer, Mater.Sci.Forum 338-342 (2000), p. 387.
13. G. Hollinger, F.J. Himpsel, J.Vac.Sci.Technol.A1 (1983) 640; G. Hollinger, F.J. Himpsel, Appl.Phys.Lett.44 (1984), p. 93.
14. G. Hollinger, F.J. Himpsel, J.Vac.Sci.Technol.A1 (1983) 640; G. Hollinger, F.J. Himpsel, Appl.Phys.Lett.44 (1984), p. 93.
15. N. Sieber, T. Seyller, J. Ristein, L. Ley, T. Heller, D.R. Batchelor, D. Schmeißer, in preparation.