Influence of interface states on high temperature SiC sensors and electronics

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 363-370

  Ghosh, Ruby N ^a   Tobias, Peter ^a   Golding, Brage ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MOS DEVICES; OXYGEN; SENSORS;

INTERFACE STATES;

SILICON CARBIDE;

EID: 0038518410     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k7.5     Document Type: Conference Paper

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