Studies of the ambient dependent inversion capacitance of catalytic metal - oxide - silicon carbide devices based on 6H- and 4H-SiC material

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1089-1092

  Tobias, P ^a   Baranzahi, A ^a   Lundstrom I ^a   Schoner A ^b   Rottner, K ^b   Karlsson, S ^b   Martensson P ^a   Lloyd Spetz, A ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ACREO AB   (Sweden)

Author keywords

Electric Admittance; Gas Sensors; High Temperature; Minority Carriers; MIS Devices

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CHEMICAL SENSORS; ELECTRIC RESISTANCE; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

INVERSION CAPACITANCE;

MOS DEVICES;

EID: 11644266520     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (5)

1. A. Lloyd Spetz, A. Baranzahi, P. Tobias, and I. Lundström, High temperature sensors based on metal insulator silicon carbide devices, phys. stat. sol. (a) 162. (1997), p.493 (and references there in).
2. A. Baranzahi, A. Lloyd Spetz, and I. Lundström, Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures, Appl. Phys. Lett., 67, 21 (1995), p. 3203.
3. Cree Research Inc., Durham, NCH 27713, USA. Some samples have epilayers grown at IMC, Kista, Sweden.
4. 2 interface traps by low temperature hydrogen annealing, J. of Electrochem.Soc.: Solid St. Sci. and Tech., 135, 7 (1988), p.1797.
5. E.H. Nicollian, and J.R. Brews, MOS Physics and Technology, Wiley & Sons (1982), p.118