Platinum-aluminum nitride-silicon carbide diodes as combustible gas sensors

Journal of Applied Physics

Volumn 87, Issue 6, 2000, Pages 3101-3107

  Samman, A ^a   Gebremariam, S ^a   Rimai, L ^a   Zhang, X ^a   Hangas, J ^a   Auner, G W ^b  

^a FORD RESEARCH LABORATORY   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001385504     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372305     Document Type: Article

References (14)

1. J. B. Cassidy, R. W. Johnson, C. D. Ellis, R. Hu, C-C Tin, T. Isaacs-Smith, W. C. Neely, and T. Kwasigro, Transactions of the Third International Conference on High Temperature Electronics, Albuquerque, NM, 1996, p. IX-27.
2. C.-M. Zetterling, K. Wongchotigul, M. G. Spencer, C. I. Harris, S. S. Wong, and M. Ostling, Mater. Res. Soc. Symp. Proc. 423, 667 (1993).
3. A. Arbab, A. Spetz, and I. Lundström, Sens. Actuators B 15-16, 19 (1993).
4. A. Baranzahi, High Temperature Solid State Gas Sensors Based on Silicon Carbide, Linköping Studies in Science and Technology (Linköping, Sweden, 1995), Vol. 422.
5. X. Li and T. L. Tansley, J. Appl. Phys. 68, 5369 (1990).
6. A. Samman, S. Gebremariam, L. Rimai, X. Zhang, and J. Hangas, Sens. Actuators B (accepted for publication).
7. M. F. M. Markus, F. M. Zwinkels, S. G. Järås, and P. Govind Menon, Catal. Rev. Sci. Eng. 35, 319 (1993).
8. M. Chen and L. D. Schmidt, J. Catal. 55, 348 (1978).
9. A. D. Brailsford, M. Yussouff, and E. M. Logothetis, Sens. Actuators B 13-14, 135 (1993).
10. P. Tobias, A. Baranzahi, and I. Lundstrom, IEEE Electron Device Lett. 18, 287 (1997).
11. A. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 122.
12. R. L. Anderson, Solid-State Electron. 5, 341 (1962).
13. A. D. Brailsford and E. M. Logothetis, Sens. Actuators 7, 39 (1985).
14. K. I. Lundstrom, M. S. Shivaraman, and C. Svensson, J. Appl. Phys. 46, 3976 (1975).